RECONS~UC~ON OF THE (110) SURFACES FOR III-V SEMICONDUCTORS; FIVE SYSTEMS INVOLVING In OR Sb
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چکیده
We report reconstruction geometries for the (110) surfaces of InSb. InAs, InP, GaSb, and AISb based on theoretical calculations on cluster models. The surface strains are in excellent accord with experiment and the trends in surface strains fit well with the Duke linear lattice constant correlation. Surface reconstruction energies are in the range of 1.1 to 1.3 eV. We also report the geometries and energies for charged surface states.
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تاریخ انتشار 2002